Datasheet > CGH40025

CGH40025

更新时间： 2024-11-14 15:18:23

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描述
25 W RF Power GaN HEMT

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CGH40025 数据手册

CGH40025

25 W, RF Power GaN HEMT

Description

The CGH40025 is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGH40025, operating

from a 28 volt rail, offers a general purpose, broadband

solution to a variety of RF and microwave applications. GaN

HEMTs offer high efficiency, high gain and wide bandwidth

capabilities making the CGH40025 ideal for linear and

compressed amplifier circuits. The transistor is available in a

screw-down, flange package and solder-down, pill package.

Package Types: 440196 & 440166

PN: CGH40025P & CGH40025F

Features

Applications

•

Up to 6 GHz Operation

15 dB Small Signal Gain at 2.0 GHz

13 dB Small Signal Gain at 4.0 GHz

30 W typical P_SAT

62% Eﬀiciency at P_SAT

28 V Operation

•

2-Way Private Radio

Broadband Amplifiers

Cellular Infrastructure

Test Instrumentation

Class A, AB, Amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 4.2, 2022-12-13

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...14

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与CGH40025相关器件

型号	品牌	获取价格	描述	数据表
CGH40025F	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025F-AMP	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025F-TB	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec
CGH40035	MACOM	获取价格	35 W RF Power GaN HEMT
CGH40035F	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-AMP	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-TB	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40045	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045	MACOM	获取价格	45 W RF Power GaN HEMT