Datasheet > CGH40010F-AMP

CGH40010F-AMP

更新时间： 2024-09-26 01:07:11

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CGH40010F-AMP 数据手册

CGH40010

10 W, RF Power GaN HEMT

Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40010, operating from a 28 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efﬁciency, high gain and

wide bandwidth capabilities making the CGH40010 ideal for linear and

compressed ampliﬁer circuits. The transistor is available in both screw-

down, ﬂange and solder-down, pill packages.

FEATURES

APPLICATIONS

•

Up to 6 GHz Operation

•

2-Way Private Radio

16 dB Small Signal Gain at 2.0 GHz

14 dB Small Signal Gain at 4.0 GHz

13 W typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

65 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/wireless

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型号	品牌	获取价格	描述	数据表
CGH40010F-TB	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40010P	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40025	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025	MACOM	获取价格	25 W RF Power GaN HEMT
CGH40025F	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025F-AMP	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025F-TB	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec
CGH40035	MACOM	获取价格	35 W RF Power GaN HEMT
CGH40035F	CREE	获取价格	35 W, RF Power GaN HEMT