Datasheet > CGH40006S

CGH40006S

更新时间： 2024-09-25 21:16:07

品牌	Logo	应用领域
科锐 - CREE		放大器光电二极管晶体管
页数	文件大小	规格书
15页	1144K
描述
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, QFN-6

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CGH40006S 技术参数

CGH40006S

6 W, RF Power GaN HEMT, Plastic

Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail,

offers a general purpose, broadband solution to a variety of RF and microwave

applications. GaN HEMTs offer high efﬁciency, high gain and wide bandwidth

capabilities making the CGH40006S ideal for linear and compressed ampliﬁer

circuits. The transistor is available in a 3mm x 3mm, surface

mount, quad-ﬂat-no-lead (QFN) package.

FEATURES

APPLICATIONS

• Up to 6 GHz Operation

• 2-Way Private Radio

• 13 dB Small Signal Gain at 2.0 GHz

• 11 dB Small Signal Gain at 6.0 GHz

• 8 W typical at P_IN= 32 dBm

• 65 % Efﬁciency at P_IN= 32 dBm

• 28 V Operation

• Broadband Ampliﬁers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear ampliﬁers suitable

for OFDM, W-CDMA, EDGE, CDMA

waveforms

• 3mm x 3mm Package

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7...15

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型号	品牌	获取价格	描述	数据表
CGH40006S-TB	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec
CGH40006S-TR	CREE	获取价格	6 W, RF Power GaN HEMT, Plastic
CGH40010	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40010	MACOM	获取价格	10 W RF Power GaN HEMT
CGH40010_15	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40010F-AMP	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40010F-TB	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40010P	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40025	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025	MACOM	获取价格	25 W RF Power GaN HEMT