Datasheet > CGH40006P

CGH40006P

更新时间： 2024-11-14 01:15:19

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CGH40006P 数据手册

CGH40006P

6 W, RF Power GaN HEMT

Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications. GaN

HEMTs offer high efﬁciency, high gain and wide bandwidth capabilities making the

CGH40006P ideal for linear and compressed ampliﬁer circuits. The transistor is

available in a solder-down, pill package.

FEATURES

APPLICATIONS

•

Up to 6 GHz Operation

•

2-Way Private Radio

13 dB Small Signal Gain at 2.0 GHz

11 dB Small Signal Gain at 6.0 GHz

8 W typical at P_IN= 32 dBm

65 % Efﬁciency at P_IN= 32 dBm

28 V Operation

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
CGH40006P-AMP	CREE	获取价格	6 W, RF Power GaN HEMT
CGH40006P-TB	CREE	获取价格	6 W, RF Power GaN HEMT
CGH40006S	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec
CGH40006S-TB	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec
CGH40006S-TR	CREE	获取价格	6 W, RF Power GaN HEMT, Plastic
CGH40010	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40010	MACOM	获取价格	10 W RF Power GaN HEMT
CGH40010_15	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40010F-AMP	CREE	获取价格	10 W, RF Power GaN HEMT
CGH40010F-TB	CREE	获取价格	10 W, RF Power GaN HEMT