是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.72 | 电容: | 3600 µF |
电容器类型: | ALUMINUM ELECTROLYTIC CAPACITOR | 直径: | 76.2 mm |
介电材料: | ALUMINUM | ESR: | 68.4 m Ω |
长度: | 130 mm | 负容差: | 10% |
端子数量: | 2 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装形式: | Screw Ends |
极性: | NON-POLARIZED | 正容差: | 50% |
额定(直流)电压(URdc): | 500 V | 纹波电流: | 7800 mA |
系列: | CGH(NON-POLAR) | 端子节距: | 31.7 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CGH362T500X5C1NN | CDE |
获取价格 |
CAP,AL2O3,3.6MF,500VDC,10% -TOL,50% +TOL | |
CGH362T500X5C1PF | CDE |
获取价格 |
CAP,AL2O3,3.6MF,500VDC,10% -TOL,50% +TOL | |
CGH362T500X5C1PN | CDE |
获取价格 |
CAP,AL2O3,3.6MF,500VDC,10% -TOL,50% +TOL | |
CGH382T350W4L | CDE |
获取价格 |
Inverter Grade Screw Terminal Aluminum Electr | |
CGH40006 | MACOM |
获取价格 |
6 W RF Power GaN HEMT | |
CGH40006P | CREE |
获取价格 |
6 W, RF Power GaN HEMT | |
CGH40006P-AMP | CREE |
获取价格 |
6 W, RF Power GaN HEMT | |
CGH40006P-TB | CREE |
获取价格 |
6 W, RF Power GaN HEMT | |
CGH40006S | CREE |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec | |
CGH40006S-TB | CREE |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec |