Datasheet > CGH31240F

CGH31240F

更新时间： 2024-04-09 19:01:06

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
12页	1905K
描述
240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CGH31240F 数据手册

CGH31240F

240 W, 2.7-3.1 GHz, 50-ohm Input/Output

Matched, GaN HEMT for S-Band Radar Systems

Description

The CGH31240F is a gallium nitride (GaN) high electron mobility

transistor (HEMT) designed speciﬁcally with high eﬀiciency, high gain

and wide bandwidth capabilities, which makes the CGH31240F ideal

for 2.7-3.1 GHz S-Band radar ampliﬁer applications. The transistor is

supplied in a ceramic/metal ﬂange package.

Package Types: 440201

PN: CGH31240F

Typical Performance Over 2.7-3.1 GHz (T_C= 25ºC) of Demonstration Amplifier

Parameter

Output Power

Gain

2.7 GHz

243

2.8 GHz

249

2.9 GHz

249

3.0 GHz

245

3.1 GHz

243

Units

11.9

Power Added Eﬀiciency

Note:

Measured in the CGH31240F-AMP ampliﬁer circuit, under 300μs pulse width, 20% duty cycle, P_IN= 42 dBm

Features

•

2.7 - 3.1 GHz Operation

12 dB Power Gain

60% Power Added Eﬀiciency

< 0.2 dB Pulsed Amplitude Droop

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.2, 2022-11-11

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...12

下载PDF

与CGH31240F相关器件

型号	品牌	描述	获取价格	数据表
CGH31240F-AMP	CREE	240 W, 2700-3100 MHz, 50-ohm Input	获取价格
CGH31240F-TB	CREE	240 W, 2700-3100 MHz, 50-ohm Input	获取价格
CGH312T350V5L	CDE	Inverter Grade Screw Terminal Aluminum Electr	获取价格
CGH312T350V5L0NG	CDE	CAP,AL2O3,3.1MF,350VDC,10% -TOL,50% +TOL	获取价格
CGH312T350V5L0NN	CDE	CAP,AL2O3,3.1MF,350VDC,10% -TOL,50% +TOL	获取价格
CGH312T350V5L0NV	CDE	CAP,AL2O3,3.1MF,350VDC,10% -TOL,50% +TOL	获取价格