Datasheet > CGD1042HI,112

CGD1042HI,112

更新时间： 2024-11-19 20:05:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	65K
描述
CGD1042HI - 1 GHz, 22 dB gain GaAs high output power doubler SFM 7-Pin

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技术参数
数据手册

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CGD1042HI,112 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SFM
针数：	7	Reach Compliance Code：	compliant
风险等级：	5.83	功能数量：	1
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SOT-115J
电源：	24 V	子类别：	RF/Microwave Amplifiers
最大压摆率：	460 mA	技术：	HYBRID
Base Number Matches：	1

CGD1042HI,112 数据手册

CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

Rev. 2 — 29 September 2010

Product data sheet

1. Product profile

1.1 General description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of

24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

1.2 Features and benefits

 Excellent linearity

 Superior levels of ESD protection

 Extremely low noise

 Excellent return loss properties

 Gain compensation over temperature

 Rugged construction

 Unconditionally stable

 Thermally optimized design

 Compliant with Directive 2002/95/EC, regarding Restriction of the use of certain

Hazardous Substances (RoHS)

 Integrated ring wave surge protection

1.3 Applications

 CATV systems operating in the 40 MHz to 1003 MHz frequency range

1.4 Quick reference data

Table 1.

Quick reference data

Bandwidth 40 MHz to 1003 MHz; V_B= 24 V (DC); Z_S= Z_L= 75; T_mb= 35 C; unless otherwise

specified.

Symbol Parameter

Conditions

Min Typ Max Unit

G_p

power gain

f = 50 MHz

21.5 -

f = 1003 MHz

22.7 23.5 dB

[1]

[2]

CTB

CCN

I_tot

composite triple beat

V_o= 56.4 dBmV at 1003 MHz

75 65 dBc

carrier-to-composite noise V_o= 56.4 dBmV at 1003 MHz

total current

dBc

440 460 mA

[1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (6 dB offset);

tilt extrapolated to 13.5 dB at 1003 MHz.

[2] Direct Current (DC).

12 3 4 5 6 7 8

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