Datasheet > CGA7718ZSR

CGA7718ZSR

更新时间： 2024-11-07 01:03:39

品牌	Logo	应用领域
威讯 - RFMD		放大器射频微波
页数	文件大小	规格书
8页	450K
描述
PUSH-PULL 50MHz to 1000MHz HIGH LINEARITY InGaP HBT AMPLIFIER

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CGA7718ZSR 数据手册

CGA-7718Z

Push-Pull

50MHz to

1000MHz

High Linearity

InGaP HBT

Amplifier

CGA-7718Z

PUSH-PULL 50MHz to 1000MHz HIGH

LINEARITY InGaP HBT AMPLIFIER

NOT FOR NEW DESIGNS

Package: SOIC-8

Product Description

Features

RFMD’s CGA-7718Z is a high performance InGaP HBT MMIC Amplifier. Designed

with the InGaP process technology for excellent reliability. A Darlington configura-

tion is utilized for broadband performance. The heterojunction increases break-

down voltage and minimizes leakage current between junctions. The CGA-7718Z

contains two amplifiers for use in wideband push-pull CATV amplifiers requiring

excellent second order performance. The second and third order non-linearities are

greatly improved in the push-pull configuration.



5V Single Supply



Excellent Linearity Perfor-

mance at +34dBmV Output

Power Per Tone



Two Amplifiers in Each SOIC-8

Package Simplify Push-Pull

Configuration PC Board Lay-

out

Optimum Technology



Available in Lead-Free, RoHS

Compliant, and Green Pack-

aging

Matching® Applied

Amplifier Configuration

GaAs HBT

GaAs MESFET

InGaP HBT



SOIC-8 Package

SiGe BiCMOS

Applications

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT



CATV Head End Driver and

Predriver Amplifier



CATV Line Driver Amplifier

GaN HEMT

InP HBT

RF MEMS

LDMOS

Specification

Parameter

Unit

Condition

Min.

Typ.

17.4

±0.6

Max.

Small Signal Gain

Gain Flatness

Output IP3

dBm

50MHz to 1000MHz

500MHz

Tone Spacing=1 MHz

per Tone=+6dBm

OUT

Output Power at 1dB Gain

Compression

dBm

500MHz

Input Return Loss

Output Return Loss

Noise Figure

Balun Insertion Loss Included

4.0

500MHz

50MHz to 1000MHz

CSO

CTB

XMOD

5.0

215

dBc

79 Ch., Flat Tilt, +34dBmV

Device Operating Voltage

Device Operating Current

5V V

Thermal Resistance

(Junction to Lead)

°C/W

Junction to case slug.

Test Conditions: V =5V, I =215mA Typ., T =25°C, Z =Z =75, Push Pull Application Circuit

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS121030

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与CGA7718ZSR相关器件

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CGA7718ZTR13	RFMD	获取价格	PUSH-PULL 50MHz to 1000MHz HIGH LINEARITY InGaP HBT AMPLIFIER
CGA7718ZTR7	RFMD	获取价格	PUSH-PULL 50MHz to 1000MHz HIGH LINEARITY InGaP HBT AMPLIFIER
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CGA7F1C0G3F120K085KA	TDK	获取价格	CAP CER 12PF 3KV C0G 1808
CGA7G1C0G3F150K110KA	TDK	获取价格	CAP CER 15PF 3KV C0G 1808
CGA7G1C0G3F180K110KA	TDK	获取价格	CAP CER 18PF 3KV C0G 1808
CGA7G1C0G3F220K110KA	TDK	获取价格	CAP CER 22PF 3KV C0G 1808
CGA7K1X7R3A102K130KA	TDK	获取价格	CAP CER 1000PF 1KV X7R 1808
CGA7K1X7R3A102M130KA	TDK	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 1000V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.001uF, S
CGA7K1X7R3A471K130KA	TDK	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 1000V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.00047uF,

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