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CGA7718ZSB PDF预览

CGA7718ZSB

更新时间: 2024-11-05 01:03:39
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波
页数 文件大小 规格书
8页 450K
描述
PUSH-PULL 50MHz to 1000MHz HIGH LINEARITY InGaP HBT AMPLIFIER

CGA7718ZSB 数据手册

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CGA-7718Z  
Push-Pull  
50MHz to  
1000MHz  
High Linearity  
InGaP HBT  
Amplifier  
CGA-7718Z  
PUSH-PULL 50MHz to 1000MHz HIGH  
LINEARITY InGaP HBT AMPLIFIER  
NOT FOR NEW DESIGNS  
Package: SOIC-8  
Product Description  
Features  
RFMD’s CGA-7718Z is a high performance InGaP HBT MMIC Amplifier. Designed  
with the InGaP process technology for excellent reliability. A Darlington configura-  
tion is utilized for broadband performance. The heterojunction increases break-  
down voltage and minimizes leakage current between junctions. The CGA-7718Z  
contains two amplifiers for use in wideband push-pull CATV amplifiers requiring  
excellent second order performance. The second and third order non-linearities are  
greatly improved in the push-pull configuration.  
5V Single Supply  
Excellent Linearity Perfor-  
mance at +34dBmV Output  
Power Per Tone  
Two Amplifiers in Each SOIC-8  
Package Simplify Push-Pull  
Configuration PC Board Lay-  
out  
Optimum Technology  
Available in Lead-Free, RoHS  
Compliant, and Green Pack-  
aging  
Matching® Applied  
Amplifier Configuration  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SOIC-8 Package  
SiGe BiCMOS  
1
2
3
4
8
7
6
5
Applications  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Si BJT  
CATV Head End Driver and  
Predriver Amplifier  
CATV Line Driver Amplifier  
GaN HEMT  
InP HBT  
RF MEMS  
LDMOS  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
17.4  
±0.6  
41  
Max.  
Small Signal Gain  
Gain Flatness  
Output IP3  
dB  
dB  
dBm  
50MHz to 1000MHz  
50MHz to 1000MHz  
500MHz  
Tone Spacing=1 MHz  
P
per Tone=+6dBm  
OUT  
Output Power at 1dB Gain  
Compression  
23  
dBm  
500MHz  
Input Return Loss  
Output Return Loss  
Noise Figure  
Balun Insertion Loss Included  
20  
16  
4.0  
dB  
dB  
dB  
500MHz  
500MHz  
50MHz to 1000MHz  
CSO  
CTB  
XMOD  
80  
78  
70  
5.0  
215  
dBc  
dBc  
dBc  
V
79 Ch., Flat Tilt, +34dBmV  
79 Ch., Flat Tilt, +34dBmV  
79 Ch., Flat Tilt, +34dBmV  
Device Operating Voltage  
Device Operating Current  
mA  
5V V  
CC  
Thermal Resistance  
(Junction to Lead)  
30  
°C/W  
Junction to case slug.  
Test Conditions: V =5V, I =215mA Typ., T =25°C, Z =Z =75, Push Pull Application Circuit  
DD  
D
L
S
L
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS121030  
1 of 8  

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