Datasheet > CGA3318Z-EVB2

CGA3318Z-EVB2

更新时间： 2024-11-27 06:47:35

品牌	Logo	应用领域
威讯 - RFMD		放大器有线电视
页数	文件大小	规格书
10页	291K
描述
DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

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CGA3318Z-EVB2 数据手册

CGA-3318Z

Dual CATV

Broadband

High Linearity

SiGe HBT

CGA-3318Z

Amplifier

DUAL CATV BROADBAND HIGH LINEARITY

SiGe HBT AMPLIFIER

Package: ESOP-8

Product Description

Features

RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier.

Designed with SiGe process technology for excellent linearity at an exceptional

price. A Darlington configuration is utilized for broadband performance. The hetero-

junction increases breakdown voltage and minimizes leakage current between

junctions. The CGA-3318Z contains two amplifiers for use in wideband Push-Pull

CATV amplifiers requiring excellent second order performance. The second and

third order non-linearities are greatly improved in the push-pull configuration.



Lead-Free, RoHS Compliant,

and Green Packaging



Excellent CSO/CTB/XMOD

Performance at +34dBmV

Output Power Per Tone



Dual Devices in Each SOIC-8

Package Simplify Push-Pull

Configuration PC Board Lay-

out

Optimum Technology

Matching® Applied

Amplifier Configuration

5MHz to 900MHz Operation

GaAs HBT

Applications

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS



CATV Head End Driver and

Predriver Amplifier



CATV Line Driver Amplifier



Si BJT

GaN HEMT

InP HBT

Specification

Parameter

Unit

Condition

Min.

Typ.

13.2

12.5

12.0

69.0

Max.

Small Signal Gain

5MHz

50MHz and 500MHz

870MHz

10.0

OIP , Tone Spacing=1MHz

dBm

50MHz, P

per tone=+6dBm

OUT

71.5

69.0

36.5

38.0

dBm

250MHz, P

500MHz, P

per tone

OUT

67.0

36.0

OIP , Tone Spacing=1MHz

50MHz, P

per tone=+6dBm

OUT

500MHz, P

870MHz, P

per tone=+6dBm

OUT

Output Power at 1dB Compression

20.0

21.0

20.6

17.0

dBm

50MHz

500MHz

870MHz

500MHz

50 - 870MHz

500MHz

18.6

Input Return Loss

Output Return Loss

Noise Figure

12.0

50 - 870MHz

4.2

4.3

5.0

4.1

150

50MHz, Balun Insertion Loss Included

500MHz, Balun Insertion Loss Included

870MHz, Balun Insertion Loss Included

6.0

4.3

165

Device Operating Voltage

Device Operating Current

Thermal Resistance

3.9

135

°C/W

(Junction to Lead)

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS091119

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与CGA3318Z-EVB2相关器件

型号	品牌	获取价格	描述	数据表
CGA3318ZPCK-410	RFMD	获取价格	DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER
CGA3318ZPCK-411	RFMD	获取价格	DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER
CGA3318ZSB	RFMD	获取价格	DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER
CGA3318ZSQ	RFMD	获取价格	DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER
CGA3318ZSR	RFMD	获取价格	DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER
CGA3767-07	SKYWORKS	获取价格	Pin Diode, 20V V(BR),
CGA3767-08	SKYWORKS	获取价格	Pin Diode, 50V V(BR),
CGA3767-09	SKYWORKS	获取价格	Pin Diode, 75V V(BR),
CGA3E1C0G2A103J080AC	TDK	获取价格	CAP CER 10000PF 100V C0G 0603
CGA3E1C0G2A103J080AE	TDK	获取价格	CAP CER 10000PF 100V C0GNP0 0603

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