Datasheet > CG2H80030D-GP4

CG2H80030D-GP4

更新时间： 2024-11-20 15:18:39

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	570K
描述
30 W; 8.0 GHz; GaN HEMT Die

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CG2H80030D-GP4 数据手册

CG2H80030D

30 W, 8.0 GHz, GaN HEMT Die

Description

The CG2H80030D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT). GaN has superior properties

compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron driꢀ velocity,

and higher thermal conductivity. GaN HEMTs oﬀer greater

power density and wider bandwidths compared to Si and

GaAs transistors.

PNs: CG2H80030D

Features

Applications

•

17 dB Typical Small Signal Gain at 4 GHz

12 dB Typical Small Signal Gain at 8 GHz

30 W Typical P_SAT

•

2-Way Private Radio

Broadband Ampliﬁers

Cellular infrastructure

Test Instrumentation

Class A, AB, Linear ampliﬁers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

28 V Operation

High Breakdown Voltage

High Temperature Operation

Up to 8 GHz Operation

High Eﬀiciency

Packaging Information

•

Bare die are shipped in Gel-Pak® containers

Non-adhesive tacky membrane immobilizes die during shipment

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.0, 2022-7-27

For further information and support please visit:

https://www.macom.com/support

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