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CFY67-08PES PDF预览

CFY67-08PES

更新时间: 2024-02-06 18:15:48
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
9页 695K
描述
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4

CFY67-08PES 技术参数

生命周期:Obsolete包装说明:MICROWAVE, X-CXMW-F4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.39其他特性:LOW NOISE
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:3.5 V最大漏极电流 (ID):0.06 A
FET 技术:HIGH ELECTRON MOBILITY最高频带:K BAND
JESD-30 代码:X-CXMW-F4JESD-609代码:e4
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:UNSPECIFIED封装形式:MICROWAVE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):11 dB
认证状态:Not Qualified参考标准:ESA/SCC 5613/004
表面贴装:YES端子面层:GOLD
端子形式:FLAT端子位置:UNSPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE

CFY67-08PES 数据手册

 浏览型号CFY67-08PES的Datasheet PDF文件第2页浏览型号CFY67-08PES的Datasheet PDF文件第3页浏览型号CFY67-08PES的Datasheet PDF文件第4页浏览型号CFY67-08PES的Datasheet PDF文件第5页浏览型号CFY67-08PES的Datasheet PDF文件第6页浏览型号CFY67-08PES的Datasheet PDF文件第7页 
CFY67  
HiRel K-Band GaAs Super Low Nois e HEMT  
HiRel Dis crete and Microwave Semiconductor  
Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT  
For professional super low-noise amplifiers  
For frequencies from 500 MHz to > 20 GHz  
Hermetically sealed microwave package  
Super low noise figure, high associated gain  
4
1
3
2
Space Qualified  
ESA/SCC Detail Spec. No.: 5613/004,  
Type Variant No.s 01 to 04, 05 foreseen (tbc.)  
ESD: Electros tatic discharge sensitive device, observe handling precautions!  
Type  
Marking Ordering Code Pin Configuration  
Package  
1
2
3
4
CFY67-06 (ql)  
CFY67-08 (ql)  
CFY67-08P (ql)  
CFY67-10 (ql)  
CFY67-10P (ql)  
-
see below  
G
S
D
S
Micro-X  
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)  
(ql) Quality Level:  
P: Professional Quality,  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Q62702F1699  
on request  
on request  
ES: ESA Space Quality,  
Q62702F1699  
(see order instructions for ordering example)  
S e miconductor Group  
1 of 10  
Dra ft D, S e pte mbe r 99  

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