型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CFY19-18 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, J | |
CFY19-22 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, J | |
CFY19-27 | INFINEON |
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Transistor | |
CFY25 | INFINEON |
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GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All | |
CFY25-17 | INFINEON |
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GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All | |
CFY25-20 | INFINEON |
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GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All | |
CFY25-20H | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
CFY25-20P | INFINEON |
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HiRel X-Band GaAs Low Noise / General Purpose MESFET | |
CFY25-20P(SAM) | INFINEON |
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暂无描述 | |
CFY25-20PES | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |