Datasheet > CFK2162-P1_07

CFK2162-P1_07

更新时间： 2022-04-23 23:00:11

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CFK2162-P1_07 数据手册

0.8-1.0 GHz

+34 dBm Power GaAs FET

November 2007 - Rev 15-Nov-07

CFK2162-P1

Features

Package Diagram

High Gain

+34 dBm Power Output

Proprietary Power FET Process

>45% Linear Power Added Efficiency

+29 dBm with 30 dBc Third Order Products

Surface Mount SO-8 Power Package

Description

The CFK2162-P1 is a high-gain FET intended for driver amplifier

applications in high-power systems, and output stage usage in

medium power applications at power levels up to +34 dBm.The

device is easily matched and provides excellent linearity at 2

Watts. Manufactured in Mimix’s power FET process, this device

is assembled in an industry standard surface mount SO-8 power

package that is compatible with high volume, automated

board assembly techniques.

Applications

ISM Band Base Stations and Terminals

Cellular Base Stations and Terminals

Wireless Local Loop

Specifications (TA = 25 ºC)

The following specifications are guaranteed at room temperature in

Mimix test fixtures at 850 MHz.

Absolute Maximum Ratings

Package Physical Dimensions

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Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

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