Datasheet > CF4N60I

CF4N60I

更新时间： 2024-11-15 01:24:15

品牌	Logo	应用领域
CTC		/
页数	文件大小	规格书
5页	753K
描述
Switch Mode Power Supply

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中文翻译

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数据手册

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CF4N60I 数据手册

CF4N60I

1-GATE 栅极

2-DRAIN 漏极

DESCRIPTION

• Electronic Ballast

3-SOURCE 源极

• Electronic Transformer

• Switch Mode Power Supply

FEATURES

• Low Thermal Resistance

• High Iput Resistance

• Fast Switching

• ROHS Compliant

I-PAK

℃

■ MAXIMUM RATINGS（Tc=25 )

PARAMETER

Drain-source Voltage

gate-source Voltage

SYMBOL

VALUE

UNIT

VDS

VGS

600

±30

℃

Continuous Drain Current(TC=25

Drain Current-Pulsed

Total Dissipation

)

IDM

℃

Junction Temperature

Storage Temperature

150

-55-150

128

Tstg

EAS

Single Pulse Avalanche Energy

℃

■ ELECTRONIC CHARACTERISTICS（Tc=25 )

CHARACTERISTICS

Drain-source Breakdown Voltage

Gate Threshold Voltage

SYMBOL TEST CONDITION

UNIT

MIN

600

MAX

BVDSS

VGS(TH)

IDSS

VGS=0V, ID=250μA

VGS=VDS ,ID=250μA

VDS=600V,VGS=0V

VGS=0V，IS=4A

Drain-source Leakage Current

Drain-Source Diode Forward Voltage

1.4

VSD

Gate-body Leakage

Current (VDS = 0)

IGSS

gfs

VGS=±30V

±100

Forward Transconductance

Vds=10V Id=2.0A

VGS=10V,ID=2.0A

Static Drain-source On

Resistance

RDS(ON)

RthJ-c

2.5

Thermal Resistance

Junction-case

℃

V1.1 2014-01

http://ctc-semicon.com

P1/5

12 3 4 5

中文翻译

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