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CEU9926 PDF预览

CEU9926

更新时间: 2024-11-02 09:23:35
品牌 Logo 应用领域
华瑞 - CET 晶体晶体管场效应晶体管
页数 文件大小 规格书
5页 59K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

CEU9926 数据手册

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CED9926/CEU9926  
PRELIMINARY  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
FEATURES  
20V , 26A , RDS(ON)=30m  
@VGS=4.5V.  
D
RDS(ON)=40m@VGS=2.5V.  
6
Super high dense cell design for extremely low RDS(ON)  
High power and current handling capability.  
TO-251 & TO-252 package.  
.
G
D
G
S
CEU SERIES  
TO-252AA(D-PAK)  
CED SERIES  
TO-251(l-PAK)  
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)  
Limit  
Unit  
V
Parameter  
Symbol  
Drain-Source Voltage  
20  
V
DS  
V
GS  
V
Gate-Source Voltage  
12  
Ć
I
D
26  
78  
26  
A
Drain Current-Continuous  
-Pulsed  
I
DM  
A
Drain-Source Diode Forward Current  
I
S
A
38  
W
Maximum Power Dissipation  
@Tc=25 C  
PD  
Derate above 25 C  
0.25  
W/ C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-55 to 175  
C
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
C/W  
C/W  
R
įJC  
4
50  
RįJA  
6-82  

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