Datasheet > CEU93A3

CEU93A3

更新时间： 2024-10-02 09:23:35

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	412K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEU93A3 数据手册

CED93A3/CEU93A3

PRELIMINARY

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 125A, R_DS(ON)= 3.2mΩ @V_GS= 10V.

R_DS(ON)= 7.0mΩ @V_GS= 4.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

±20

125

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

500

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

Single Pulsed Avalanche Energy ^d

Single Pulsed Avalanche Current ^d

Operating and Store Temperature Range

P_D

0.46

800

W/ C

E_AS

I_AS

T_J,T_stg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

2.2

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 3. 2010.Sep.

http://www.cetsemi.com

Details are subject to change without notice .

12 3 4

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