Datasheet > CESD5V0D3

CESD5V0D3

更新时间： 2024-09-24 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
5页	402K
描述
反向截止电压（Vrwm）:5V;极性/通道数（Channel）:1-Line，Unidirectional;击穿电压（VBR):6.2V;峰值脉冲电流(Ipp):13A;最大钳位电压(Vc):13V;最大钳位电压(Vc):150pF

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CESD5V0D3 数据手册

UMW

CESD5V0D3

DESCRIPTION

Designed to protect voltage sensitive electronic components from ESD

and other transients. Excellent clamping capability, low leakage, and fast

response time provide best in class protection on designs that are

exposed to ESD.

The combination of small size, high level of ESD protection makes them a

flexible solution for applications such as HDMI, Display Port TM, and MDDI

interfaces. It is designed to replace multiplayer varistors (MLV) in consumer

equipments applications such as mobile phone, notebook, PAD, STB, LCD

TV etc.

FEATURES



Uni-directional ESD protection of one line

Reverse stand−off voltage: 5V

Low reverse clamping voltage

Low leakage current

Excellent package:1.7mm×1.3mm×1.0mm



Fast response time

JESD22-A114-B ESD Rating of class 3B per human bodymodel

IEC 61000-4-2 Level 4 ESD protection

APPLICATIONS



Computers and peripherals

Audio and video equipment

Cellular handsets and accessories



Portable electronics

Other electronics equipments communication systems

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Symbol

Limit

±25

Unit

IEC 61000-4-2 ESD Voltage

Air Model

Contact Model

±25

(1)

V_ESD

JESD22-A114-B ESD Voltage

ESD Voltage

Per Human Body Model

Machine Model

±16

±0.4

170

(2)

Peak Pulse Power

P_PP

(2)

Peak Pulse Current

I_PP

Lead Solder Temperature − Maximum (10 Second Duration)

T_L

260

℃

T_J,T_stg

Operation Junction and Storage Temperature Range

-55 ~ +150

℃

(1).Device stressed with ten non-repetitive ESD pulses.

(2).Non-repetitive current pulse 8/20µs exponential decay waveform.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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