Datasheet > CES520

CES520

更新时间： 2024-09-24 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	124K
描述
High-Speed Switching

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CES520 数据手册

CES520

Schottky Barrier Diode Silicon Epitaxial

CES520

1. Applications

•

High-Speed Switching

2. Features

(1) Low reverse current: IR(2) = 5 µA (max)

(2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages.

3. Packaging and Internal Circuit

1: Cathode

2: Anode

ESC

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Note

Rating

Unit

Reverse voltage

IFM



300

Peak forward current

Average rectified current

Non-repetitive peak forward surge current

Power dissipation



200

IFSM

(Note 1)

(Note 2)





150

Junction temperature

125

Storage temperature

Tstg

Topr



-55 to 125

-40 to 100

Operating temperature



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Measured with a 10ms pulse.

Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.

2012-05-24

Rev.3.0

12 3 4 5

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