Datasheet > CEP13N10_08

CEP13N10_08

更新时间： 2022-05-13 14:35:15

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	354K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CEP13N10_08 数据手册

CEP13N10/CEB13N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

100V, 12.8A, R_DS(ON)= 180mΩ @V_GS= 10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

100

Gate-Source Voltage

±20

12.8

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.43

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

2.3

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

62.5

Rev 2. 2008.Jan.

http://www.cetsemi.com

Details are subject to change without notice .

12 3 4

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