CEP12N6/CEB12N6
CEF12N6
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
600V
600V
600V
RDS(ON)
0.65Ω
0.65Ω
0.65Ω
ID
@VGS
10V
CEP12N6
CEB12N6
CEF12N6
12A
12A
12A d
10V
10V
D
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
G
S
CEB SERIES
CEP SERIES
TO-263(DD-PAK)
TO-220
CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Limit
Parameter
Symbol
Units
TO-220/263
TO-220F
Drain-Source Voltage
VDS
VGS
ID
600
V
V
Gate-Source Voltage
±30
12
48
12 d
48d
60
Drain Current-Continuous
Drain Current-Pulsed a
A
e
IDM
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
250
1.67
W
PD
0.4
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.6
62.5
2.5
65
RθJA
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 1. 2008.Mar.
http://www.cetsemi.com
1