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2N6031 PDF预览

2N6031

更新时间: 2024-01-07 20:15:23
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 312K
描述
PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS

2N6031 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-3包装说明:CASE 1-07, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.18
外壳连接:COLLECTOR最大集电极电流 (IC):16 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):4JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):1 MHzBase Number Matches:1

2N6031 数据手册

 浏览型号2N6031的Datasheet PDF文件第2页 
TM  
Central  
2N6031  
Semiconductor Corp.  
PNP SILICON  
POWER TRANSISTOR  
140 VOLTS, 200 WATTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6031 is  
a 16 Ampere PNP Silicon Power Transistor  
designed for use in high power amplifiers and  
high voltage switching regulator circuits.  
MARKING: FULL PART NUMBER  
TO-3 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
V
V
140  
140  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
7.0  
Continuous Collector Current  
Peak Collector Current  
I
16  
A
C
I
20  
A
CM  
Continuous Base Current  
Power Dissipation  
I
5.0  
A
B
P
200  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +200  
0.875  
°C  
°C/W  
J
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
I
V
V
V
V
V
=140V  
=140V, V  
=140V, V  
=70V  
2.0  
mA  
CBO  
CEX  
CEX  
CEO  
EBO  
CB  
CE  
CE  
CE  
EB  
=1.5V  
=1.5V  
2.0  
7.0  
2.0  
5.0  
mA  
mA  
mA  
mA  
V
EB(off)  
EB(off)  
, T =150  
°C  
C
=7.0V  
BV  
I =200mA  
140  
CEO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
V
V
V
V
I =10A, I =1.0A  
1.0  
2.0  
1.8  
1.5  
60  
V
C
B
I =16A, I =4.0A  
V
C
B
I =10A, I =1.0A  
V
C
B
V
=2.0V, I =8.0A  
V
CE  
CE  
CE  
CE  
CB  
CE  
C
h
h
V
V
V
V
V
=2.0V, I =8.0A  
15  
4.0  
1.0  
C
=2.0V, I =16A  
FE  
C
f
=20V, I =1.0A, f=500kHz  
MHz  
pF  
T
C
C
=10V, I =0, f=100kHz  
1000  
ob  
fe  
E
h
=10V, I =4.0A, f=1.0kHz  
15  
C
R0 (27-August 2009)  

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