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2N5193PBFREE PDF预览

2N5193PBFREE

更新时间: 2024-02-19 11:39:06
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
2页 518K
描述
Power Bipolar Transistor,

2N5193PBFREE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
风险等级:5.83最大集电极电流 (IC):4 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):2 MHzBase Number Matches:1

2N5193PBFREE 数据手册

 浏览型号2N5193PBFREE的Datasheet PDF文件第2页 
TM  
2N5193  
2N5194  
2N5195  
Central  
Semiconductor Corp.  
PNP SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N5193 Series  
types are Silicon PNP Power Transistors, manufactured  
by the epitaxial base process, designed for medium  
power amplifier and switching applications.  
These devices are complementary to the NPN 2N5190  
Series types.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
2N5193  
40  
2N5194  
60  
2N5195  
80  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Base Current  
V
V
V
CBO  
CEO  
EBO  
40  
60  
80  
V
5.0  
V
I
4.0  
A
C
I
1.0  
A
B
Power Dissipation (T =25°C)  
P
40  
W
C
D
Operating and Storage Junction Temperature  
Thermal Resistance (Junction to Case)  
T , T  
stg  
-65 to +150  
3.12  
°C  
°C/W  
J
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
1.0  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=5.0V  
μA  
μA  
mA  
mA  
V
CBO  
CEX  
CEO  
EBO  
CB  
CE  
CE  
EB  
CBO  
, V =1.5V  
CEO EB  
CEO  
1.0  
BV  
BV  
BV  
I =100mA (2N5193)  
40  
60  
80  
CEO  
CEO  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
I =100mA (2N5194)  
V
C
I =100mA (2N5195)  
V
C
V
V
V
I =1.5A, I =150mA  
0.6  
1.4  
1.2  
100  
80  
V
C
B
I =4.0A, I =1.0A  
V
C
B
V
=2.0V, I =1.5A  
V
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
V
V
V
V
V
=2.0V, I =1.5A (2N5193, 2N5194)  
25  
20  
C
=2.0V, I =1.5A (2N5195)  
FE  
C
=2.0V, I =4.0A (2N5193, 2N5194)  
10  
FE  
C
=2.0V, I =4.0A (2N5195)  
7.0  
2.0  
FE  
C
f
=10V, I =1.0A, f=1.0MHz  
MHz  
T
C
R1 (10-February 2009)  

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