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2N2907 PDF预览

2N2907

更新时间: 2024-02-27 05:21:55
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 526K
描述
PNP SILICON TRANSISTOR

2N2907 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.62Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-CDSO-N3元件数量:1
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2N2907 数据手册

 浏览型号2N2907的Datasheet PDF文件第2页 
2N2906 2N2906A  
2N2907 2N2907A  
www.centralsemi.com  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907  
series types are silicon PNP epitaxial planar transistors  
designed for small signal, general purpose switching  
applications.  
MARKING: FULL PART NUMBER  
TO-18 CASE  
2N2906  
2N2907  
60  
2N2906A  
2N2907A  
60  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
V
CBO  
CEO  
EBO  
40  
60  
V
V
5.0  
600  
400  
1.8  
I
mA  
mW  
W
C
P
D
D
Power Dissipation (T =25°C)  
P
C
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
°C  
J
stg  
Θ
438  
97  
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
2N2906  
2N2907  
2N2906A  
2N2907A  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
nA  
I
I
I
V
V
V
=50V  
-
20  
-
10  
10  
50  
-
CBO  
CBO  
CEV  
CB  
CB  
CE  
=50V, T =150°C  
-
20  
50  
-
-
μA  
nA  
V
A
=30V, V =0.5V  
-
-
EB  
BV  
BV  
BV  
I =10μA  
60  
60  
CBO  
C
I =10mA  
40  
-
60  
-
V
CEO  
C
I =10μA  
5.0  
-
5.0  
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
-
0.4  
1.6  
1.3  
2.6  
-
-
0.4  
1.6  
1.3  
2.6  
-
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
-
-
V
C
B
I =150mA, I =15mA  
-
-
V
C
B
I =500mA, I =50mA  
-
-
V
C
B
f
V
=20V, I =50mA, f=100MHz  
200  
200  
MHz  
pF  
pF  
ns  
ns  
T
CE  
CB  
EB  
CC  
CC  
C
C
V
V
V
V
=10V, I =0, f=1.0MHz  
-
-
-
-
8.0  
30  
45  
100  
-
-
-
-
8.0  
30  
45  
100  
ob  
ib  
E
C
=2.0V, I =0, f=1.0MHz  
C
t
t
=30V, I =150mA, I =15mA  
on  
off  
C
B1  
=6.0V, I =150mA, I =I =15mA  
C
B1 B2  
R4 (30-January 2012)  

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