Datasheet > CEM4279

CEM4279

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	490K
描述
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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CEM4279 数据手册

CEM4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

40V, 6.1A, R_DS(ON)= 32mΩ @V_GS= 10V.

R_DS(ON)= 46mΩ @V_GS= 4.5V.

-40V, -4.3A, R_DS(ON)= 66mΩ @V_GS= -10V.

R_DS(ON)= 105mΩ @V_GS= -4.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

N-Channel

P-Channel

-40

Units

Drain-Source Voltage

±20

6.1

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

±20

-4.3

I_DM

-17

Maximum Power Dissipation

P_D

2.0

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

62.5

C/W

Rev 2. 2007.Jan

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4 5 6 7

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