Datasheet > CEM3407L

CEM3407L

更新时间： 2022-10-21 01:53:48

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	228K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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CEM3407L 数据手册

CEM3407L

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -5.1A, R_DS(ON)= 48mΩ @V_GS= -10V.

R_DS(ON)= 65mΩ @V_GS= -4.5V.

R_DS(ON)= 115mΩ @V_GS= -2.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-30

±12

-5.1

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

-20.4

Maximum Power Dissipation

P_D

2.0

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

62.5

C/W

Rev 1. 2010.Nov

http://www.cetsemi.com

Details are Subject to change without notice

12 3 4

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