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NE3503M04-A PDF预览

NE3503M04-A

更新时间: 2024-02-12 14:12:42
品牌 Logo 应用领域
CEL 晶体放大器晶体管光电二极管ISM频段
页数 文件大小 规格书
7页 397K
描述
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

NE3503M04-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.21配置:SINGLE
最小漏源击穿电压:3 V最大漏极电流 (Abs) (ID):0.07 A
最大漏极电流 (ID):0.015 AFET 技术:HETERO-JUNCTION
最高频带:KU BANDJESD-30 代码:R-PDSO-F4
JESD-609代码:e6元件数量:1
端子数量:4工作模式:DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:0.125 W最小功率增益 (Gp):11 dB
认证状态:Not Qualified子类别:FET RF Small Signal
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

NE3503M04-A 数据手册

 浏览型号NE3503M04-A的Datasheet PDF文件第2页浏览型号NE3503M04-A的Datasheet PDF文件第3页浏览型号NE3503M04-A的Datasheet PDF文件第4页浏览型号NE3503M04-A的Datasheet PDF文件第5页浏览型号NE3503M04-A的Datasheet PDF文件第6页浏览型号NE3503M04-A的Datasheet PDF文件第7页 
NEC's C TO Ku BAND  
SUPER LOW NOISE AND  
NE3503M04  
HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET  
FEATURES  
• SUPER LOW NOISE FIGURE AND  
HIGH ASSOCIATED GAIN:  
NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V,  
ID = 10 mA, f = 12 GHz  
• FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD  
(M04) PACKAGE:  
• GATE WIDTH:  
Wg = 160 μm  
M04 PACKAGE  
APPLICATIONS  
DBS LNB gain-stage, Mix-stage  
Low noise amplifier for microwave communication  
system  
ORDERING INFORMATION  
PART NUMBER  
NE3503M04-A  
QUANTITY  
50 pcs (Non reel)  
3 kpcs/reel  
PACKAGE  
MARKING  
V75  
SUPPLYING FORM  
4-Pin thin-type  
super minimold  
(Pb-Free)  
8 mm wide embossed taping  
NE3503M04-T2-A  
Pin 1 (Source), Pin 2 (Drain) face the perforation side  
of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: NE3503M04-A  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
SYMBOL  
VDS  
VGS  
ID  
RATINGS  
4.0  
UNIT  
V
3.0  
V
IDSS  
mA  
μA  
mW  
°C  
Gate Current  
IG  
80  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
125  
Tch  
+125  
Tstg  
65 to +125  
°C  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
California Eastern Laboratories  

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