生命周期: | Contact Manufacturer | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.40 |
风险等级: | 5.65 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.11 A |
集电极-发射极最大电压: | 16 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | 最高频带: | X BAND |
JESD-30 代码: | R-XUUC-N2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NE243187 | CEL | RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN |
获取价格 |
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NE243188 | CEL | RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN |
获取价格 |
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NE243287 | CEL | RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN |
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NE243288 | CEL | RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN |
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NE243499 | CEL | RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN |
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NE24600 | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 250MA I(C) | CHIP |
获取价格 |