Datasheet > CDMSJ2204.7-650

CDMSJ2204.7-650

更新时间： 2024-04-09 19:02:17

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
6页	728K
描述
4.7A,650V Through-Hole MOSFET N-Channel Super Junction

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CDMSJ2204.7-650 数据手册

CDMSJ2204.7-650

www.centralsemi.com

N-CHANNEL

SUPER JUNCTION MOSFET

4.7 AMP, 650 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CDMSJ2204.7-650

is a high current, 650 Volt N-Channel power MOSFET

designed for high voltage, fast switching applications

such as Power Factor Correction (PFC), and power

chargers. This MOSFET combines high voltage

capability with low r

low gate charge.

, low threshold voltage and

DS(ON)

MARKING: CDMSJ

4.7-650

TO-220FP CASE

FEATURES:

APPLICATIONS:

Power Factor Correction

TV Power

High voltage capability (V =650V)

•

Low gate charge (Q =1.9nC)

UPS

Low r

(0.9Ω)

DS(ON)

PD Charger

Adapter

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

650

4.7

3.0

Continuous Drain Current (T =100°C)

Pulsed Drain Current

Forward Diode Current

Power Dissipation

9.5

4.7

22.5

°C

Power Dissipation (T =100°C)

Operating and Storage Junction Temperature

T , T

-55 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

650

TYP

MAX

UNITS

=0V, I =250μA

730

3.0

DSS

I =250μA

GS(th)

DS GS,

=10V, I =2.0A (Note 1)

861

990

1.0

100

mΩ

μA

DS(on)

DSS

=650V, V =0V

=30V, V =0V

GSS

=30V, V =0V

GSSR

gfs

=20V, I =4.5A

=520V, I =4.5A, V =10V

9.7

1.9

=520V, I =4.5A, V =10V

R2 (1-November 2023)

12 3 4 5 6

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