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CDLL4150-1E3 PDF预览

CDLL4150-1E3

更新时间: 2024-11-27 07:49:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 44K
描述
Rectifier Diode, 1 Element, 0.3A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2

CDLL4150-1E3 技术参数

生命周期:Transferred包装说明:O-LELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.61
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2最大输出电流:0.3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:WRAP AROUND
端子位置:END

CDLL4150-1E3 数据手册

 浏览型号CDLL4150-1E3的Datasheet PDF文件第2页 
1N4150UR-1  
1N3600UR  
CDLL4150  
CDLL3600  
• 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV  
PER MIL-PRF-19500/231  
• SWITCHING DIODE  
• HERMETICALLY SEALED  
• METALLURGICALLY BONDED  
• DOUBLE PLUG CONSTRUCTION  
MAXIMUM RATINGS  
Junction Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Operating Current: 300 mA @ T = + 25°C  
A
EC  
Derating: 3.1 mA dc/°C Above T  
= + 110°C  
Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)  
MILLIMETERS  
INCHES  
DIM MIN MAX MIN MAX  
D
F
1.60  
0.41  
3.30  
1.70 0.063 0.067  
0.55 0.016 0.022  
3.70 .130 .146  
G
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.  
G1  
S
2.54 REF.  
0.03 MIN.  
.100 REF.  
.001 MIN.  
Type  
V
V
I
1
C
t
BR  
RWM  
R1  
R2  
rr  
I = I = 10 to 100 mA dc  
F
V
= 50 V dc  
V
T
= 50 V dc  
V
= 0; f = 1 Mhz;  
R
R
R
R
I
= 10 µA  
T
= 25°C  
= 150°C  
ac signals = 50 m V (p-p)  
R
L
= 100 ohms  
R
A
A
FIGURE 1  
V dc  
V (pk)  
µA dc  
µA dc  
pF  
ns  
DESIGN DATA  
CDLL3600  
CDLL4150,-1  
75  
75  
50  
50  
0.1  
0.1  
100  
100  
2.5  
2.5  
4
4
CASE: DO-213AA, Hermetically sealed  
glass case. (MELF, SOD-80; LL34)  
FORWARD VOLTAGE LIMITS – ALL TYPES  
V
V
V
V
V
F1  
F2  
F3  
F4  
F5  
LEAD FINISH: Tin / Lead  
Limits  
I
= 1 mA dc  
I
= 10 mA dc  
I
= 50 mA dc  
(Pulsed)  
I
= 100 mA dc  
(Pulsed)  
I
F
= 200 mA dc  
(Pulsed)  
F
F
F
F
THERMAL RESISTANCE (R  
):  
OJEC  
V dc  
V dc  
V dc  
V dc  
V dc  
100 °C/W maximum AT L = 0  
minimum  
maximum  
0.540  
0.620  
0.680  
0.740  
0.780  
0.860  
0.820  
0.920  
0.870  
1.000  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 70  
JX  
O
POLARITY: Cathode end is banded.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) Of this Device is Approximately  
+6PPM/°C. The COE of the Mounting  
Surface System Should Be Selected To  
Provide A Suitable Match With This  
Device.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
115  

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