Datasheet > CDFG6511N

CDFG6511N

更新时间： 2024-04-09 19:03:13

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
6页	811K
描述
11.5A,650V Surface mount Wide-Bandgap GaN N-Channel FET

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CDFG6511N 数据手册

CDFG6511N

SURFACE MOUNT GaN

N-CHANNEL

www.centralsemi.com

DESCRIPTION:

POWER FET

11 AMP, 650 VOLT

The CENTRAL SEMICONDUCTOR CDFG6511N is a

650 Volt N-Channel GaN FET designed for high voltage,

soft switching applications. This GaN FET combines

high voltage capability with low r

charge for optimal efficiency.

and low gate

DS(ON)

MARKING: C6511 L/C D/C

FEATURES:

DFN8X8 CASE

APPLICATIONS:

Switch-mode power supplies

High power chargers

Electric vehicle inverters

High voltage capability

Low gate charge & r

Fast switching

•

DS(ON)

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Drain-Source Voltage

Gate-Source Voltage

650

-1.4 to +7.0

11.5

Continuous Drain Current (T =25°C)

Pulsed Drain Current (T =25°C)

20.5

Power Dissipation (T =25°C)

°C

Power Dissipation (T =25°C)

1.1

Operating and Storage Junction Temperature

T , T

-55 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

=6.0V, V =0

GSSF

GSSR

DSS

=1.0V, V =0

=650V, V =0

0.45

2.5

190

=0, I =250µA

650

1.2

DSS

GS(th)

=V , I =12.2mA

1.7

2.6

138

GS DS

=0, I =3.9A

=6.0V, I =3.9A

mΩ

DS(ON)

=400V, V =0, f=100kHz

iss

=400V, V =0, f=100kHz

oss

=400V, V =0, f=100kHz

0.5

rss

=0 to 400V, V =0

oss(er)

=0 to 400V, V =0

oss(tr)

=400V, V =0 to 6.0V, I =3.9A

2.8

1.1

0.25

g(tot)

=400V, V =0 to 6.0V, I =3.9A

R2 (1-November 2023)

12 3 4 5 6

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