Datasheet > CDD2061F

CDD2061F

更新时间： 2024-11-18 23:41:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	92K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB

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数据手册

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CDD2061F 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON EPITAXIAL POWER TRANSISTOR

CDD2061

(9AW)

TO-220

Designed For AF Power Amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter- Base Voltage

Collector Current

5.0

3.0

Peak

ICP

6.0

Power Dissipation @ Ta=25 deg C

Power Dissipation @ Tc=25 deg C

Junction Temperature

Storage Temperature Range

2.0

150

-55 to +150

deg C

Tstg

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

VCEO

VCBO

VEBO

ICBO

TEST CONDITION

IC=1mA, IB=0

IC=50uA, IE=0

IE=50uA,IC=0

VCB=60V, IE=0

VEB=4V,IC=0

IC=2A,IB=0.2A

IC=2A, IB=0.2A

IC=0.5A, VCE=5V

MIN

5.0

TYP

MAX

UNIT

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

Collector Emitter Saturation Voltage VCE(Sat)

Base Emitter Saturation Voltage

DC Current Gain

1.0

1.5

500

IEBO

VBE(Sat)

hFE

Dynamic Characteristics

Transition Frequency

VCE=5V,IC=0.5A,

f=5MHz

VCB=10V, IE=0

f=1MHz

8.0

MHz

Collector Output Capacitance

Cob

hFE CLASSIFICATION:-

MARKING :

D : 60 -120;

E : 100 -200;

F: 160-320;

G : 250-500

CDD

2061

CDD

2061

CDD

2061

CDD

2061

Continental Device India Limited

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Data Sheet

12 3

中文翻译

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