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CDBV6-00340TI-G PDF预览

CDBV6-00340TI-G

更新时间: 2024-11-06 06:47:07
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 166K
描述
SMD Schottky Barrier Diode Arrays

CDBV6-00340TI-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:2.29
配置:SEPARATE, 3 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-G6元件数量:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:0.03 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:40 V最大反向电流:1 µA
反向测试电压:10 V子类别:Other Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDBV6-00340TI-G 数据手册

 浏览型号CDBV6-00340TI-G的Datasheet PDF文件第2页浏览型号CDBV6-00340TI-G的Datasheet PDF文件第3页浏览型号CDBV6-00340TI-G的Datasheet PDF文件第4页 
SMD Schottky Barrier Diode Arrays  
SMD Diodes Specialist  
CDBV6-00340TI-G  
Forward Current: 30mA  
Reverse Voltage: 40V  
RoHS Device  
Features  
SOT-363  
-Low forward voltage drop.  
-Fast switching.  
0.087(2.20)  
0.071(1.80)  
-Ultra-small surface mount package.  
-PN junction guard ring for transient and ESD  
0.053(1.35)  
0.045(1.15)  
protection.  
-Available in lead Free version.  
0.006(0.15)  
0.003(0.08)  
Mechanical data  
0.056(1.40)  
0.047(1.20)  
0.044(1.10)  
0.035(0.90)  
-Case: SOT-363, Molded Plastic  
-Case material: UL 94V-0 flammability retardant  
classification.  
0.096(2.45)  
0.085(2.15)  
-Terminals: Solderable per MIL-STD-202, Method  
208  
-Marking: Orientation: See diagrams below  
-Weight: 0.006 grams (approx.)  
-Marking: 731  
0.004(0.10)max  
0.014(0.35)  
0.006(0.15)  
0.010(0.25)min  
Dimensions in inches and (millimeters)  
6
5
4
Q2  
Q1  
Q3  
1
2
4
CDBV6-00340TI-G  
*Symmetrical configuration, no orientation indicator.  
Maximum Rating (at TA=25unless otherwise noted)  
Symbol  
Parameter  
Limits  
Unit  
Peak repetitive reverse voltage  
VRM  
40  
V
DC blocking voltage  
VR  
40  
V
Forward continuous current  
Forward surge current (Note 1) @t<1.0s  
Operation and storage temperature range  
I
F
30  
mA  
mA  
OC  
I
FSM  
200  
125  
T
J
O
Operation and storage temperature range  
TSTG  
-40 ~ +125  
C
Electrical Characteristics (at TA=25unless otherwise noted)  
Symbol  
Typ  
Parameter  
Conditions  
Min  
Max Unit  
Forward voltage  
IF=1mA  
VF  
0.37  
mV  
μA  
pF  
Reverse leakage current  
Total capacitance  
V
R
R
=10V  
=1.0V, f=1.0MHz  
I
R
1
V
C
T
2
Notes1 : 60HZ * 1 Cyc.  
REV:B  
Page 1  
QW-BA017  

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