CD9013ET&A

更新时间： 2024-09-24 13:06:43

品牌	Logo	应用领域
CDIL		晶体小信号双极晶体管局域网
页数	文件大小	规格书
4页	155K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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CD9013ET&A 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.67	Is Samacsys：	N
Base Number Matches：	1

CD9013ET&A 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

NPN SILICON PLANAR TRANSISTOR

CD9013

TO-92

Plastic Package

General Purpose Audio Amplifier Applications

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC Unless Otherwise Specified)

VALUE

DESCRIPTION

SYMBOL

UNITS

V_CEO

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

V_CBO

V_EBO

I_C

500

625

Collector Current Continuous

Collector Power Dissipation

P_C

Operating And Storage Junction

Temperature Range

T_j, T_stg

-55 to +150

ºC

ELECTRICAL CHARACTERISTICS (T_a=25ºC Unless Otherwise Specified)

TEST CONDITION

DESCRIPTION

SYMBOL

MIN

MAX

UNITS

I_C=1mA, I_B=0

V_CEO

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

V_CBO

V_EBO

I_CBO

I_EBO

*h_FE

h_FE

I_C=100mA, I_E=0

I_E=100mA, I_C=0

V_CB=25V, I_E= 0

100

465

V_BE=3V, I_C= 0

V_CE=1V, I_C=50mA

V_CE=1V, I_C=500mA

I_C=150mA, I_B=15mA

I_C=500mA, I_B=50mA

I_C=150mA, I_B=15mA

I_C=500mA, I_B=50mA

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

DYNAMIC CHARACTERISTICS

0.2

0.6

1.0

1.2

V_CE(sat)

V_BE(sat)

V_CB=10V, f=1MHz

I_C=50mA, V_CE=10V, f=100MHz

V_CE=10V,I_C=1mA, f=1KHz

C_ob

f_T

Output Capacitance

Transition Frequency

Noise Figure

MHz

200

6.0

*h_FECLASSIFICATION

D/E/F:64 - 135

G/H/I: 118 - 305

J: 278 - 465

CD9013Rev_1170603D

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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