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CD9013D PDF预览

CD9013D

更新时间: 2024-09-22 22:28:27
品牌 Logo 应用领域
CDIL 晶体晶体管局域网
页数 文件大小 规格书
4页 155K
描述
NPN SILICON PLANAR TRANSISTOR

CD9013D 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
零件包装代码:TO-92包装说明:PLASTIC, TO-92, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.75最大集电极电流 (IC):0.5 A
配置:SINGLE最小直流电流增益 (hFE):64
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

CD9013D 数据手册

 浏览型号CD9013D的Datasheet PDF文件第2页浏览型号CD9013D的Datasheet PDF文件第3页浏览型号CD9013D的Datasheet PDF文件第4页 
Continental Device India Limited  
An ISO/TS16949 and ISO 9001 Certified Company  
NPN SILICON PLANAR TRANSISTOR  
CD9013  
TO-92  
Plastic Package  
C
B
E
General Purpose Audio Amplifier Applications  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Otherwise Specified)  
VALUE  
30  
DESCRIPTION  
SYMBOL  
UNITS  
V
VCEO  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
VCBO  
VEBO  
IC  
40  
V
5
V
500  
625  
Collector Current Continuous  
Collector Power Dissipation  
mA  
mW  
PC  
Operating And Storage Junction  
Temperature Range  
Tj, Tstg  
-55 to +150  
ºC  
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)  
TEST CONDITION  
DESCRIPTION  
SYMBOL  
MIN  
30  
40  
5
MAX  
UNITS  
IC=1mA, IB=0  
VCEO  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Cut off Current  
Emitter Cut off Current  
DC Current Gain  
V
V
VCBO  
VEBO  
ICBO  
IEBO  
*hFE  
hFE  
IC=100mA, IE=0  
IE=100mA, IC=0  
V
VCB=25V, IE = 0  
100  
100  
465  
nA  
nA  
VBE=3V, IC = 0  
VCE=1V, IC=50mA  
VCE=1V, IC=500mA  
IC=150mA, IB=15mA  
IC=500mA, IB=50mA  
IC=150mA, IB=15mA  
IC=500mA, IB=50mA  
64  
40  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
DYNAMIC CHARACTERISTICS  
0.2  
0.6  
1.0  
1.2  
V
V
V
V
VCE(sat)  
VBE(sat)  
VCB=10V, f=1MHz  
IC=50mA, VCE=10V, f=100MHz  
VCE =10V,IC=1mA, f=1KHz  
Cob  
fT  
Output Capacitance  
Transition Frequency  
Noise Figure  
10  
pF  
MHz  
dB  
200  
NF  
6.0  
*hFE CLASSIFICATION  
D/E/F:64 - 135  
G/H/I: 118 - 305  
J: 278 - 465  
CD9013Rev_1170603D  
Data Sheet  
Page 1 of 4  
Continental Device India Limited  

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