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CD74HCT365QDRQ1 PDF预览

CD74HCT365QDRQ1

更新时间: 2024-09-09 12:42:59
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器逻辑集成电路光电二极管
页数 文件大小 规格书
12页 549K
描述
HIGH-SPEED CMOS LOGIC HEX BUFFER/LINE DRIVER, THREE-STATE NON-INVERTING AND INVERTING

CD74HCT365QDRQ1 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:PLASTIC, MS-012AC, SOIC-16针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.7Is Samacsys:N
系列:HCTJESD-30 代码:R-PDSO-G16
JESD-609代码:e4长度:9.9 mm
逻辑集成电路类型:BUS DRIVER位数:6
功能数量:1端口数量:2
端子数量:16最高工作温度:125 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE传播延迟(tpd):38 ns
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.75 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
Base Number Matches:1

CD74HCT365QDRQ1 数据手册

 浏览型号CD74HCT365QDRQ1的Datasheet PDF文件第2页浏览型号CD74HCT365QDRQ1的Datasheet PDF文件第3页浏览型号CD74HCT365QDRQ1的Datasheet PDF文件第4页浏览型号CD74HCT365QDRQ1的Datasheet PDF文件第5页浏览型号CD74HCT365QDRQ1的Datasheet PDF文件第6页浏览型号CD74HCT365QDRQ1的Datasheet PDF文件第7页 
CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1  
www.ti.com  
SCHS382 JANUARY 2010  
HIGH-SPEED CMOS LOGIC HEX BUFFER/LINE DRIVER, THREE-STATE NON-INVERTING  
AND INVERTING  
Check for Samples: CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1  
1
FEATURES  
HCT Types  
Qualified for Automotive Applications  
4.5V to 5.5V Operation  
Buffered Inputs  
Direct LSTTL Input Logic Compatibility,  
VIL= 0.8V (Max), VIH = 2V (Min)  
High Current Bus Driver Outputs  
CMOS Input Compatibility, Il 1mA at VOL,  
VOH  
Typical Propagation Delay tPLH, tPHL = 8ns at  
VCC = 5V, CL = 15pF, TA = 25°C  
Fanout (Over Temperature Range)  
D PACKAGE  
(TOP VIEW)  
Standard Outputs . . . . . . . . . . . . . . . 10  
LSTTL Loads  
Bus Driver Outputs . . . . . . . . . . . . . 15  
LSTTL Loads  
Wide Operating Temperature Range . . . –40°C  
to 125°C  
Balanced Propagation Delay and Transition  
Times  
Significant Power Reduction Compared to  
LSTTL Logic ICs  
HC Types  
2V to 6V Operation  
High Noise Immunity: NIL = 30%, NIH = 30%  
of VCC at VCC = 5V  
DESCRIPTION  
The CD74HC365-Q1, CD74HC366-Q1, and CD74HCT365-Q1 silicon gate CMOS three state buffers are general  
purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high  
speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of  
CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of  
driving up to 15 low power Schottky inputs.  
The CD74HC365-Q1 and CD74HCT365-Q1 are non-inverting buffers, whereas the CD74HC366-Q1 is an  
inverting buffer. These devices have two three-state control inputs (OE1 and OE2) which are NORed together to  
control all six gates.  
The ’HCT365-Q1 logic families are speed, function and pin compatible with the standard LS logic family.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
HC366Q  
CD74HC366QDRQ1  
–40°C to 125°C  
SOIC – D  
Reel of 2500  
CD74HC365QDRQ1  
Product Preview  
Product Preview  
CD74HCT365QDRQ1  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2010, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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