是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP-14 | 针数: | 14 |
Reach Compliance Code: | compliant | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 1 week | 风险等级: | 5.51 |
Is Samacsys: | N | 系列: | HCT |
JESD-30 代码: | R-PDIP-T14 | JESD-609代码: | e4 |
长度: | 19.305 mm | 负载电容(CL): | 50 pF |
逻辑集成电路类型: | NAND GATE | 最大I(ol): | 0.004 A |
湿度敏感等级: | 1 | 功能数量: | 4 |
输入次数: | 2 | 端子数量: | 14 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
输出特性: | OPEN-DRAIN | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP14,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
包装方法: | TUBE | 峰值回流温度(摄氏度): | 260 |
电源: | 5 V | Prop。Delay @ Nom-Sup: | 36 ns |
传播延迟(tpd): | 36 ns | 认证状态: | Not Qualified |
施密特触发器: | NO | 座面最大高度: | 5.08 mm |
子类别: | Gates | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
CD54HCT03F3A | TI |
完全替代 |
High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain | |
CD74HCT03E | TI |
类似代替 |
High Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain | |
74HCT03N | NXP |
功能相似 |
Quad 2-input NAND gate |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CD74HCT03EN | ETC |
获取价格 |
Logic IC | |
CD74HCT03EX | RENESAS |
获取价格 |
暂无描述 | |
CD74HCT03EX | ROCHESTER |
获取价格 |
HCT SERIES, QUAD 2-INPUT NAND GATE, PDIP14, PACKAGE-14 | |
CD74HCT03F | ETC |
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Logic IC | |
CD74HCT03H | ETC |
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Quad 2-input NAND Gate | |
CD74HCT03M | TI |
获取价格 |
High Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain | |
CD74HCT03M96 | TI |
获取价格 |
High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain | |
CD74HCT03M96E4 | TI |
获取价格 |
High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain | |
CD74HCT03M96G4 | TI |
获取价格 |
High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain | |
CD74HCT03ME4 | TI |
获取价格 |
High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain |