是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DIP | 包装说明: | DIP-14 |
针数: | 14 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 1 week | 风险等级: | 1.51 |
Is Samacsys: | N | 系列: | HC/UH |
JESD-30 代码: | R-PDIP-T14 | JESD-609代码: | e4 |
长度: | 19.3 mm | 负载电容(CL): | 50 pF |
逻辑集成电路类型: | NAND GATE | 最大I(ol): | 0.0052 A |
功能数量: | 4 | 输入次数: | 2 |
端子数量: | 14 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 输出特性: | OPEN-DRAIN |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP14,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 包装方法: | TUBE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 2/6 V |
最大电源电流(ICC): | 0.04 mA | Prop。Delay @ Nom-Sup: | 30 ns |
传播延迟(tpd): | 150 ns | 认证状态: | Not Qualified |
施密特触发器: | NO | 座面最大高度: | 5.08 mm |
子类别: | Gates | 最大供电电压 (Vsup): | 6 V |
最小供电电压 (Vsup): | 2 V | 标称供电电压 (Vsup): | 4.5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 6.35 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
CD74HC03EE4 | TI |
类似代替 |
High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain | |
MC74HC03ANG | ONSEMI |
功能相似 |
Quad 2−Input NAND Gate with Open−Drain Outputs High−Performance Silicon& |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CD74HC03EE4 | TI |
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High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain | |
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