CD4148WSP
SMALL-SIGNAL CHIP DIODE
0805
FEATURES
MECHANICAL DATA
This diode is also available other case styles
Including the 1206 case with the type designation
CD4148WP, and the 0603 case with the type
Designation CD4148WTP
Case 0805
Weight Approx. 6mg
Marking Cathode band
Silicon Epitaxial Planar Diode
Fast switching diode.
o
Absolute Maxmum Ratings & Thermal Characteristics Tamb=25 C, unless otherwise specified
PARAMETER
SYMBOL
VALUE
75
UNITS
Volts
Volts
mA
Reverse Voltage
VR
Peak Reverse Voltage
VRM
100
300
Forward Continuous current
IFM
1)
Average rectified current sin half wave rectification with
IF(AV)
mA
150
resistive load f
Surge Forward Current t 1S and TJ=25 C
Power dissipation
Typical Thermal Resistance Junction to Ambiant Air
Junction Temperature
=50Hz
0
mA
mW
IFSM
Ptot
500
1)
400
1)
K / W
R
JA
375
0
TJ
TS
175
C
0
Storage Temperature
-65 to +175
C
1) Valid provided that electrodes are kept at ambient temperature.
o
ELECTRICAL CHARACTERISTICS Tamb=25 C, unless otherwise specified
PARAMETER
IF = 10mA
SYMBOL
Min
Max
1.0
UNITS
Forward voltage
Leakage current
Capacitance
V
VF
VR = 20V
VR = 75V
25
5.0
50
nA
A
IR
0
A
VR = 20V, TJ = 150 C
pF
VF = VR = 0V
Ctot
4
Voltage rise when switching ON tested with 50mA pulses,
tp = 0.1us, rise time<30ns
V
Vfr
2.5
fp = (5 to 100) KHz
Reverse recovery Time
Rectification efficiency
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IF = 10mA to IR = 1mA,
VR = 6V, RL = 100
nS
TRR
4
r
f = 100MHz, VRF = 2V
%
45
1