CD4019BMS
CMOS Quad AND/OR Select Gate
November 1994
Features
Pinout
CD4019BMS
TOP VIEW
• High Voltage Type (20V Rating)
• Medium Speed Operation tPHL = tPLH = 60ns (typ.) at
CL = 50pF, VDD = 10V
B4
A3
1
2
3
4
5
6
7
8
16 VDD
• Standardized Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
15 A4
B3
14 Kb
A2
13 D4 = A4 Ka + B4 Kb
12 D3 = A3 Ka + B3 Kb
11 D2 = A2 Ka + B2 Kb
10 D1 = A1 Ka + B1 Kb
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
B2
A1
B1
• Maximum Input Current of 1µa at 18V Over Full Pack-
age-Temperature Range;
9
Ka
VSS
- 100nA at 18V and 25oC
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
Functional Diagram
- 2V at VDD = 10V
- 2.5V at VDD = 15V
Ka Kb
VDD
9
14
16
Applications
15
• And/Or Select Gating
A4
• Shift-Right/Shift-Left Registers
• True/Complement Selection
• AND/OR/Exclusive-OR Selection
13
D4
D3
D2
D1
1
2
3
4
5
6
7
B4
A3
B3
A2
B2
A1
B1
12
11
10
D4 = (A4 Ka) + (B4 Kb)
Description
CD4019BMS types consist of four AND/OR select gate con-
figurations, each consisting of two 2-input AND gates driving
a single 2-input OR gate. Selection is accomplished by con-
trol bits Ka and Kb. In addition to selection of either channel
A or channel B information, the control bits can be applied
simultaneously to accomplish the logical A + B function.
8
VSS
The CD4019BMS is supplied in these 16-lead outline pack-
ages:
Braze Seal DIP
Frit Seal DIP
H4T
H1E
Ceramic Flatpack H3X
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 3299
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