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CD4001BM

更新时间： 2024-11-03 22:54:19

品牌	Logo	应用领域
美国国家半导体 - NSC		栅
页数	文件大小	规格书
6页	169K
描述
Quad 2-Input NOR,NAND Buffered B Series Gate

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数据手册

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CD4001BM 数据手册

March 1988

CD4001BM/CD4001BC Quad 2-Input

NOR Buffered B Series Gate

CD4011BM/CD4011BC Quad 2-Input

NAND Buffered B Series Gate

General Description

Features

Low power TTL

compatibility

Fan out of 2 driving 74L

or 1 driving 74LS

These quad gates are monolithic complementary MOS

(CMOS) integrated circuits constructed with N- and P-chan-

nel enhancement mode transistors. They have equal source

and sink current capabilities and conform to standard B se-

ries output drive. The devices also have buffered outputs

which improve transfer characteristics by providing very

high gain.

5V–10V–15V parametric ratings

Symmetrical output characteristics

Maximum input leakage 1 mA at 15V over full tempera-

ture range

All inputs are protected against static discharge with diodes

to V

and V

Schematic Diagrams

CD4001BC/BM

(/4 of device shown

Logical ‘‘1’’

Logical ‘‘0’’

High

Low

TL/F/5939–2

*All inputs protected by standard

CMOS protection circuit.

TL/F/5939–1

CD4011BC/BM

(/4 of device shown

Logical ‘‘1’’

Logical ‘‘0’’

High

Low

TL/F/5939–6

*All inputs protected by standard

CMOS protection circuit.

TL/F/5939–5

1995 National Semiconductor Corporation

TL/F/5939

RRD-B30M105/Printed in U. S. A.

12 3 4 5 6

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