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CD2419-B08200 PDF预览

CD2419-B08200

更新时间： 2024-02-27 13:25:08
品牌 Logo 应用领域
伯恩斯 - BOURNS 整流二极管桥式整流二极管瞄准线
页数 文件大小 规格书
4页 495K
描述
CD2419-B08200~B08800 Surface Mount Bridge Rectifier Diode

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中文翻译

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CD2419-B08200 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：R-XDSO-N4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.84
Is Samacsys：N其他特性：LOW POWER LOSS
最小击穿电压：200 V配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
JESD-30 代码：R-XDSO-N4JESD-609代码：e3
最大非重复峰值正向电流：35 A元件数量：4
相数：1端子数量：4
最大输出电流：0.8 A封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：200 V表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

CD2419-B08200 数据手册

 浏览型号CD2419-B08200的Datasheet PDF文件第2页浏览型号CD2419-B08200的Datasheet PDF文件第3页浏览型号CD2419-B08200的Datasheet PDF文件第4页 
The CD2419-B Series is currently  
available, although not recommended  
for new designs. The CD2320-B  
Features  
■ Lead free as standard  
Series is preferred.  
■ RoHS compliant*  
■ Low power loss & high efficiency  
■ High current capability  
■ Low profile package  
Applications  
■ AC operated products ■ Set top boxes  
■ Computer monitors  
■ Cable modems  
CD2419-B08200~B08800 Surface Mount Bridge Rectifier Diode  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Bridge Rectifier Diodes for rectification applications, in compact chip package 2419 size format, which offer PCB real estate  
savings and are considerably smaller than most competitive parts. The Bridge Rectifier Diodes offer a forward current of 0.8 A with a choice  
of repetitive peak reverse voltages between 200 V and 800 V.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD2419-  
Parameter  
Symbol  
Unit  
B08200  
B08400  
B08600  
B08800  
Maximum Repetitive  
Peak Reverse Voltage  
V
V
200  
400  
600  
800  
V
RRM  
Maximum RMS Voltage  
140  
200  
280  
400  
420  
600  
560  
800  
V
V
RMS  
Maximum DC Blocking Voltage  
Maximum Average Forward  
V
DC  
I
0.8  
5
A
(AV)  
Rectified Current (T = 55°C)  
A
DC Reverse Current @ Rated DC  
I
µA  
R
R
Blocking Voltage (@T = 25 °C)  
J
DC Reverse Current @ Rated DC  
I
200  
25  
µA  
pF  
Blocking Voltage (@T = 150 °C)  
J
Typical Junction Capacitance1  
C
J
Maximum Instantaneous  
Forward Voltage @ 1 A  
V
F
1
V
Typical Thermal Resistance2  
R
θJL  
110  
°C/W  
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load (JEDEC Method)  
I
35  
A
FSM  
Notes:  
1 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.  
2 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
TJ  
CD2419-B08200~B08800  
-65 to +175  
Unit  
°C  
Operating Temperature Range  
Storage Temperature Range  
TSTG  
-65 to +175  
°C  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

中文翻译

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