Datasheet > CD2383O

CD2383O

更新时间： 2024-09-15 23:40:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	219K
描述
TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1A I(C) \| TO-92

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中文翻译

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数据手册

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CD2383O 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN COMPLEMENTARY SILICON TRANSISTSOR

CD2383

TO-92

Plastic Package

Vertical Deflection Output and Class B Sound Output Applications of Color T.V

ABSOLUTE MAXIMUM RATINGS ( Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

V_CEO

V_CBO

V_EBO

I_C

160

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current Continuous

Base Current Continuous

Power Dissipation

I_B

500

700

P_D

Operating And Storage Junction

Temperature Range

T_j, T_stg

-55 to +150

ºC

ELECTRICAL CHARACTERISTICS ( Ta=25ºC unless specified otherwise)

VALUE

TYP

UNIT

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

BV_CEOI_C=10mA,I_B=0

160

Collector Emitter Breakdown Voltage

Collector Cut off Current

Emitter Cut off Current

I_CBO

I_EBO

V_CB=150V, I_E= 0

V_BE=6V, I_C= 0

h_FE*

V_CE=5V,I_C=200mA

I_C=500mA, I_B=50mA

V_CE=5V, I_C=5mA

320

1.5

0.75

DC Current Gain

V_CE(sat)

V_BE(on)

Collector Emitter Saturation Voltage

Base Emitter on Voltage

0.45

DYNAMIC CHARACTERISTICS

Gain Bandwith Product

Output Capacitance

f_T

I_C=200mA, V_CE=5V

100

MHz

C_ob

I_C=0, V_CB=10V

f=1MHz

*Pulse Condition: Width < 300ms, Duty Cycle < 2%.

CLASSIFICATION

hFE

60-120

100-200

160-320

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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