Datasheet > CD2320-B1600

CD2320-B1600

更新时间： 2024-11-06 04:11:27

品牌	Logo	应用领域
伯恩斯 - BOURNS		整流二极管桥式整流二极管
页数	文件大小	规格书
4页	515K
描述
CD2320-B1200~B11000 Surface Mount Bridge Rectifier Diode

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中文翻译

获取价格

技术参数
数据手册
替代型号

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CD2320-B1600 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	R-PDFP-F4	针数：	4
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	8.55
Base Number Matches：	1

CD2320-B1600 数据手册

Features

Applications

■ Lead free as standard

■ RoHS compliant*

■ AC operated products

■ Computer monitors

■ Set top boxes

■ Low power loss & high efficiency

■ High current capability

■ Low profile package

■ Cable modems

CD2320-B1200~B11000 Surface Mount Bridge Rectifier Diode

General Information

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

increasingly smaller electronic components.

Bourns offers Bridge Rectifier Diodes for rectification applications, in compact chip package 2320 size format, which offer PCB real estate

savings and are considerably smaller than most competitive parts. The Bridge Rectifier Diodes offer a forward current of 1 A with a choice of

repetitive peak reverse voltages between 200 V and 1000 V.

Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)

CD2320-

B1600

Parameter

Symbol

Unit

B1200

B1400

B1800

B11000

Maximum Repetitive

Peak Reverse Voltage

200

400

600

800

1000

RRM

Maximum RMS Voltage

140

200

280

400

420

600

560

800

700

RMS

Maximum DC Blocking Voltage

1000

Maximum Average Forward

Rectified Current (T = 55 °C)

DC Reverse Current @ Rated DC

1.0

(AV)

µA

Blocking Voltage (@T = 25 °C)

DC Reverse Current @ Rated DC

200

µA

Blocking Voltage (@T = 150 °C)

Typical Junction Capacitance¹

Maximum Instantaneous

Forward Voltage @ 1 A

Typical Thermal Resistance²

110

°C/W

θJL

Peak forward surge current 8.3 ms

single half sine-wave superimposed

on rated load (JEDEC Method)

FSM

Notes:

1 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.

2 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.

Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)

Parameter

Symbol

CD2320-B1200~B11000

-55 to +175

Unit

°C

Operating Temperature Range

Storage Temperature Range

TSTG

-55 to +175

°C

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

12 3 4

中文翻译

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CD2320-B1600 替代型号

型号	品牌	替代类型	描述	数据表
CD-MBL106S	BOURNS	功能相似	Bridge Rectifier Diode,
CDNBS04-B08600	BOURNS	功能相似	CDNBS04-B08200~B08800 Surface Mount Rectifier

与CD2320-B1600相关器件

型号	品牌	获取价格	描述	数据表
CD2320-B1800	BOURNS	获取价格	CD2320-B1200~B11000 Surface Mount Bridge Rectifier Diode
CD2328AO	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 1.5A I(C) \| TO-92
CD2328AY	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 1.5A I(C) \| TO-92
CD2337	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 1.5A I(C) \| STX-8
CD2383	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1A I(C) \| TO-92
CD2383O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1A I(C) \| TO-92
CD2383R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1A I(C) \| TO-92
CD2383Y	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1A I(C) \| TO-92
CD2397	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
CD24.1101.151	SCHURTER	获取价格	Mains Power Connector, 2A, 125/250VAC, Male, Solder Terminal, Socket, ROHS COMPLIANT

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