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CD214B-T58A PDF预览

CD214B-T58A

更新时间： 2024-02-14 23:35:59
品牌 Logo 应用领域
伯恩斯 - BOURNS 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 221K
描述
CD214B Transient Voltage Suppressor Diode Series

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中文翻译

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CD214B-T58A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50Factory Lead Time：14 weeks
风险等级：5.56最大击穿电压：74.6 V
最小击穿电压：64.4 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified最大重复峰值反向电压：58 V
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

CD214B-T58A 数据手册

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Features  
■ Lead free versions available  
■ RoHS compliant (lead free version)*  
■ Surface Mount SMB package  
■ Standoff Voltage: 5.0 to 170 volts  
■ Power Dissipation: 600 watts  
CD214B Transient Voltage Suppressor Diode Series  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly  
smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)  
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown  
Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices  
from 0 V to Minimum Breakdown Voltage.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Minimum Peak Pulse Power Dissipation (T = 1 ms)  
P
P
600  
Watts  
PK  
Peak Forward Surge Current  
8.3ms Single Half Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
100  
Amps  
FSM  
(Note 3)  
Steady State Power Dissipation @ T = 75 °C  
L
P
5.0  
Watts  
Volts  
M(AV)  
Maximum Instantaneous Forward Voltage @ I  
(For Unidirectional Units Only)  
= 50 A  
PP  
V
F
(Note 5)  
Operating Temperature Range  
Storage Temperature Range  
T
J
-55 to +150  
-55 to +175  
°C  
°C  
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.  
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.  
5. V = 3.5 V on CD214B-T5.0A through CD214B-T90A and V = 5.0 V on CD214B-T100A through CD214B-T170A.  
F
F
How To Order  
CD 214B - T 5.0 CA __  
Common Code  
Chip Diode  
Package  
214A = SMA/DO-214AC  
214B = SMB/DO-214AA  
214C = SMC/DO-214AB  
Model  
T = Transient Voltage Suppressor Series  
Working Peak Reverse Voltage  
Reliable Electronic Solutions  
5.0 = 5.0 V  
(Volts)  
(Volts)  
RWM  
170 = 170 V  
Asia-Pacific:  
RWM  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Suffix  
A = 5 % Tolerance Device  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
CA = 5 % Tolerance Bidirectional Device  
Terminations  
LF = 100 % Sn (lead free)  
Blank = Sn/Pb  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
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中文翻译

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CD214B-T58A 替代型号

型号 品牌 替代类型 描述 数据表
SMBJ58A-13-F DIODES

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1SMB58AT3G ONSEMI

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SMBJ58A LITTELFUSE

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 Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors

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