Datasheet > CD00251512

CD00251512

更新时间： 2024-09-29 12:55:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	930K
描述
N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220

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中文翻译

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数据手册

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CD00251512 数据手册

STD7N52DK3

STF7N52DK3, STP7N52DK3

N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220

SuperFREDmesh3™ Power MOSFET

Features

R_DS(on)

max.

Order codes V_DSS

I_D

STD7N52DK3

6 A

90 W

25 W

90 W

DPAK

STF7N52DK3 525 V < 1.15 Ω 6 A ⁽¹⁾

STP7N52DK3

6 A

1. Limited by package

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

TO-220¹

TO-220FP

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

Figure 1.

Internal schematic diagram

■ Zener-protected

D(2)

Application

Switching applications

G(1)

Description

These devices are N-channel

SuperFREDmesh3™, a new Power MOSFET

technology that is obtained via improvements

applied to STMicroelectronics’ SuperMESH3™

technology. The resulting product has an

extremely low on resistance, superior dynamic

performance, high avalanche capability and a fast

body-drain recovery diode, making it especially

suitable for the most demanding applications.

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STD7N52DK3

STF7N52DK3

STP7N52DK3

7N52DK3

DPAK

TO-220FP

TO-220

Tape and reel

Tube

October 2010

Doc ID 16387 Rev 2

1/16

www.st.com

12 3 4 5 6 7...16

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