Datasheet > CD0.2A30E3

CD0.2A30E3

更新时间： 2024-09-30 09:13:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	47K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DIE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CD0.2A30E3 数据手册

• IN6677 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/610

• 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIER CHIPS

• SILICON DIOXIDE PASSIVATED

CD6675 thru CD6677

and

CD0.2A20 thru CDO.2A40

and

• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES ,

WITH THE EXCEPTION OF SOLDER REFLOW

CD0.5A20 thru CDO.5A40

MAXIMUM RATINGS, 0.2 AMP DEVICES

24 MILS

16 MILS

Operating Temperature: -65°C to +125°C

Storage Temperature: -65°C to +150°C

Average Rectified Forward Current: 0.2 AMP @ 75°C

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.

MAXIMUM

CDI

TYPE

NUMBER

WORKING PEAK

REVERSE

VOLTAGE

MAXIMUM REVERSE

LEAKAGE CURRENT

AT RATED VOLTAGE

CAPACITANCE @

MAXIMUM FORWARD VOLTAGE

= 0 VOLTS

f =1.0 MHz

RWM

@ 20 mA

@ 200 mA

@ 630 mA

@ +25°C

I @ +100°C

VOLTS

0.37

VOLTS

0.50

VOLTS

0.70

µ A

5.0

0.6

PICO FARADS

CD6675

CD6676

0.37

0.50

0.70

CD6677

0.37

0.50

0.70

BACKSIDE IS CATHODE

CD0.2A20

CD0.2A30

CD0.2A40

0.37

0.50

0.70

FIGURE 1

0.37

0.50

0.70

0.37

0.50

0.70

DESIGN DATA

METALLIZATION:

MAXIMUM RATINGS, 0.5 AMP DEVICES

Top: (Anode)................................Al

Back: (Cathode)............................Au

Operating Temperature: -65°C to +125°C

Storage Temperature: -65°C to +150°C

AL THICKNESS..........25,000 Å Min

GOLD THICKNESS... ...4,000 Å Min

CHIP THICKNESS............. ...10 Mils

Average Rectified Forward Current: 0.5 AMP @ 75°C

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.

MAXIMUM

CAPACITANCE @

= 0 VOLTS

TOLERANCES: ALL

Dimensions + 2 mils

CDI

TYPE

NUMBER

WORKING PEAK

REVERSE

MAXIMUM

FORWARD VOLTAGE

MAXIMUM REVERSE

LEAKAGE CURRENT

AT RATED VOLTAGE

VOLTAGE

f =1.0 MHz

RWM

@ 0.1A

@ 0.5A

@ +25°C

I @ +100°C

VOLTS

0.50

VOLTS

0.65

µ A

10.0

1.0

PICO FARADS

CD0.5A20

CD0.5A30

CD0.5A40

0.50

0.65

0.50

0.65

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

WEBSITE: http://www.microsemi.com

FAX (978) 689-0803

217

中文翻译

下载PDF

与CD0.2A30E3相关器件

型号	品牌	获取价格	描述	数据表
CD0.2A40	CDI-DIODE	获取价格	SILICON DIOXIDE PASSIVATED
CD0.2A40E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DIE-2
CD0.5A20	CDI-DIODE	获取价格	SILICON DIOXIDE PASSIVATED
CD0.5A30	CDI-DIODE	获取价格	SILICON DIOXIDE PASSIVATED
CD0.5A30E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DIE-2
CD0.5A40	CDI-DIODE	获取价格	SILICON DIOXIDE PASSIVATED
CD0.5A40E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, DIE-2
CD00000448	STMICROELECTRONICS	获取价格	Precision 500 mA regulators
CD00001237	STMICROELECTRONICS	获取价格	8-bit MCUs with A/D converter
CD00001366	STMICROELECTRONICS	获取价格	Transil