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CD-DF408S

更新时间: 2024-11-20 22:58:19
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管
页数 文件大小 规格书
5页 165K
描述
BRIDGE RECT 1PHASE 800V 4A SMD

CD-DF408S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:25 weeks 5 days
风险等级:5.73二极管类型:BRIDGE RECTIFIER DIODE
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CD-DF408S 数据手册

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Features  
RoHS compliant*  
Low power loss and high efficiency  
High current capability  
Low profile package  
Applications  
AC operated products  
Computer monitors  
Set-top boxes  
Cable modems  
CD-DF4xxS(L) Series Surface Mount Bridge Rectifier Diode  
General Information  
The markets of portable communications, computing and video equipment are  
challenging the semiconductor industry to develop increasingly smaller electronic  
components.  
4
1
+
Bourns offers Bridge Rectifier Diodes for rectification applications in compact chip package  
0.41 ˝ x 0.32 ˝ size format, which offers PCB real estate savings and are considerably smaller  
than standard parts. The Bridge Rectifier Diodes offer a forward current of 4 A with a choice  
of repetitive peak reverse voltages between 600 V and 1000 V.  
~
3
~
2
Absolute Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
CD-  
DF406SL  
Parameter  
Symbol  
Unit  
DF406S  
DF408S  
DF410S  
DF408SL  
DF410SL  
Maximum Repetitive  
Peak Reverse Voltage  
V
600  
800  
1000  
600  
800  
1000  
V
A
RRM  
Maximum Average Forward Rectified  
I
4.0  
F(AV)  
Current (T = 55 °C)  
A
Peak Forward Surge Current 8.3 ms  
Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
I
150.0  
A
FSM  
Operating Temperature Range  
Storage Temperature Range  
T
-55 to +175  
-55 to +175  
°C  
°C  
J
T
STG  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD-DF4xxS(L)  
Min.  
Parameter  
Symbol  
Unit  
Test Conditions  
CD-DF4xxS  
Typ.  
0.92  
0.86  
0.08  
45  
Max.  
0.95  
0.90  
5.0  
Instantaneous Forward Voltage  
Repetitive Peak Reverse Current  
Junction Capacitance  
V
I
= 2 A  
F
V
F
CD-DF4xxSL  
I
V
= V  
T = +25 °C  
A
μA  
pF  
RRM  
R
RRM  
CD-DF4xxS  
CD-DF4xxSL  
CD-DF4xxS  
CD-DF4xxSL  
CD-DF4xxS  
CD-DF4xxSL  
V
= 4 V,  
f = 1.0 MHz  
R
C
J
45  
35  
(1)  
Thermal Resistance, Junction to Air  
R
°C / W  
°C / W  
ΘJA  
35  
15  
(1)  
Thermal Resistance, Junction to Lead  
R
ΘJL  
15  
2
NOTE 1: Thermal resistance, junction to ambient, measured on PC board with 50 mm (0.03 mm thick) land areas.  
WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov  
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.  
Specifications are subject to change without notice.  
Users should verify actual device performance in their specific applications.  
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.  

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