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CBR50-100PLEADFREE PDF预览

CBR50-100PLEADFREE

更新时间: 2024-01-22 18:04:23
品牌 Logo 应用领域
CENTRAL 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
2页 86K
描述
Bridge Rectifier Diode, 1 Phase, 50A, 1000V V(RRM), Silicon, PLASTIC, CASE FP, 4 PIN

CBR50-100PLEADFREE 技术参数

生命周期:Obsolete包装说明:S-PUFM-W4
Reach Compliance Code:compliant风险等级:5.84
最小击穿电压:1000 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:S-PUFM-W4
最大非重复峰值正向电流:400 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:50 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:WIRE端子位置:UPPER
Base Number Matches:1

CBR50-100PLEADFREE 数据手册

 浏览型号CBR50-100PLEADFREE的Datasheet PDF文件第2页 
TM  
CBR50-020P SERIES  
Central  
Semiconductor Corp.  
50 AMP  
SILICON BRIDGE RECTIFIER  
200 thru 1000 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBR50-020P  
series types are silicon single phase full wave  
bridge rectifiers designed for general purpose  
applications. The molded epoxy case has a built in  
metal baseplate for heat sink mounting.  
MARKING CODE: FULL PART NUMBER  
CASE FP  
MAXIMUM RATINGS (T =25°C)  
A
CBR50- CBR50- CBR50- CBR50- CBR50-  
SYMBOL  
020P  
200  
200  
140  
040P  
400  
400  
280  
060P  
600  
600  
420  
50  
080P  
800  
800  
560  
100P  
1000  
1000  
700  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
V
V
V
A
A
RRM  
V
R
RMS Reverse Voltage  
V
R(RMS)  
Average Forward Current (T =55°C)  
I
O
C
Peak Forward Surge Current  
I
400  
FSM  
Operating and Storage  
Junction Temperature  
T , T  
stg  
-65 to +150  
1.5  
°C  
J
Thermal Resistance  
Θ
°C/W  
JC  
RMS Isolation Voltage (case to lead)  
V
2500  
V
ac  
iso  
ELECTRICAL CHARACTERISTICS PER DIODE (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
UNITS  
µA  
I
V =Rated V T =25°C  
5.0  
500  
1.1  
R
R
R
RRM,  
C
I
V =Rated V  
, T =125°C  
µA  
R
RRM  
C
V
I =25A  
V
F
F
C
V =4.0V, f=1.0MHz  
300  
pF  
J
R
R0 (31-August 2004)  

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