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CAT93C86RD4I-1.8TE13 PDF预览

CAT93C86RD4I-1.8TE13

更新时间: 2024-11-29 22:29:11
品牌 Logo 应用领域
CATALYST 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
9页 410K
描述
16K-Bit Microwire Serial EEPROM

CAT93C86RD4I-1.8TE13 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SON, SOLCC8,.12,25Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
备用内存宽度:8数据保留时间-最小值:100
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-N8
JESD-609代码:e0内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:16
端子数量:8字数:1024 words
字数代码:1000最高工作温度:85 °C
最低工作温度:-40 °C组织:1KX16
封装主体材料:PLASTIC/EPOXY封装代码:SON
封装等效代码:SOLCC8,.12,25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:2/5 V认证状态:Not Qualified
串行总线类型:MICROWIRE最大待机电流:0.00001 A
子类别:EEPROMs最大压摆率:0.003 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子节距:0.635 mm
端子位置:DUAL写保护:HARDWARE/SOFTWARE
Base Number Matches:1

CAT93C86RD4I-1.8TE13 数据手册

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E
CAT93C86 (Die Rev. C)  
16K-Bit Microwire Serial EEPROM  
TM  
FEATURES  
High speed operation: 3MHz  
1,000,000 Program/erase cycles  
100 year data retention  
Low power CMOS technology  
1.8 to 6.0 volt operation  
Commercial, industrial and automotive  
temperature ranges  
Selectable x8 or x16 memory organization  
Self-timed write cycle with auto-clear  
Hardware and software write protection  
Power-up inadvertant write protection  
Sequential read  
Program enable (PE) pin  
“Green” package option available  
DESCRIPTION  
Catalyst’s advanced CMOS EEPROM floating gate  
technology. Thedeviceisdesignedtoendure1,000,000  
program/erase cycles and has a data retention of 100  
years. The device is available in 8-pin DIP, 8-pin SOIC,  
8-pin TSSOP and 8-pad TDFN packages.  
The CAT93C86 is a 16K-bit Serial EEPROM memory  
device which is configured as either registers of 16 bits  
(ORG pin at VCC) or 8 bits (ORG pin at GND). Each  
register can be written (or read) serially by using the  
DI (or DO) pin. The CAT93C86 is manufactured using  
PIN CONFIGURATION  
FUNCTIONAL SYMBOL  
VCC  
SOIC Package (J,W)  
DIP Package (P, L)  
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
CS  
SK  
DI  
V
ORG  
GND  
DO  
PE  
CC  
ORG  
CS  
DI  
PE  
V
CC  
CS  
DO  
ORG  
GND  
DO  
SK  
DI  
SK  
PE  
SOIC Package (S,V)  
SOIC Package (K,X)  
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
GND  
CS  
SK  
DI  
V
CS  
SK  
DI  
V
CC  
PE  
ORG  
GND  
CC  
PE  
ORG  
GND  
PIN FUNCTIONS  
DO  
DO  
Pin Name  
Function  
Chip Select  
Clock Input  
CS  
SK  
TDFN Package (RD4, ZD4)  
DI  
Serial Data Input  
Serial Data Output  
+1.8 to 5.5V Power Supply  
Ground  
1
2
3
4
8
7
6
5
CS  
SK  
DI  
V
PE  
ORG  
GND  
CC  
DO  
VCC  
GND  
ORG  
PE  
DO  
Memory Organization  
Program Enable  
Top View  
Note: When the ORG pin is connected to VCC, the x16 organiza-  
tion is selected. When it is connected to ground, the x8 pin is  
selected. If the ORG pin is left unconnected, then an internal pullup  
device will select the x16 organization.  
© 2004 by Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice.  
Doc. No. 1091, Rev. M  

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